any changing of specification will not be informed individual BAV70W dual chips common cathode surface mount switching diode a maximum ratings (each diode) rating symbol value unit reverse voltage v r 70 vdc forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board(1) t a =25c derate above 25c p d 200 1.6 mw mw/c thermal resistance, junction to ambient r j a q q r j a 0.625 c/w total device dissipation alumina s ubstrate,(2) t a =25c derate above 25c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient 417 c/w junction and storage temperature t j ,tstg ?55to+150 c d e v i c e m a r k i n g b a v 7 0 w = a 4 , k j a 0 1 - j u n - 2 0 0 4 rev. b p a g e 1 o f 3 r o h s c o m p l i a n t p r o d u c t a suf fix of "-c" specifies halogen & lead-free electrical characteristics (t a =25c unless otherwise noted) (each diode) characteristic symbol min max unit off characteristics reverse breakdown voltage (i (br) = 100 .adc) v (br ) 70 ? vdc r everse voltage leakage current (v r =70vdc) (v r =70vdc,t j = 150 c) i r ? ? 5.0 100 uadc diode capacitance (v r =0,f=1.0mhz) c d ? 1.5 pf forward voltage (i f =1.0madc) (i f =10madc) (i f =50madc) (i f = 150 madc) v f ? ? ? ? 715 855 1000 1250 mv dc reverse recovery time (i f =i r =10madc,i r(rec) =1.0madc)(figure1) r l =100 t rr ? 6.0 ns forward recovery time (i f =10madc,t r =20ns)(figure2) v rf ? 1.75 v 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. for each individual diode while the second diode is unbiased. features . fast switching speed . surface mount package ideally suited for automatic insertion . for general purpose switching applications . high conductance 3 cathode anode 1 2 anode h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e d i m m i n m a x a 1 . 8 0 0 2 . 2 0 0 b 1 . 1 5 0 1 . 3 5 0 c 0 . 8 0 0 1 . 0 0 0 d 0 . 3 0 0 0 . 4 0 0 g 1 . 2 0 0 1 . 4 0 0 h 0 . 0 0 0 0 . 1 0 0 j 0 . 1 0 0 0 . 2 5 0 k 0 . 3 5 0 0 . 5 0 0 l 0 . 5 9 0 0 . 7 2 0 s 2 . 0 0 0 2 . 4 0 0 v 0 . 2 8 0 0 . 4 2 0 a l l d i m e n s i o n i n m m s o t - 3 2 3 ( s c - 7 0 ) k j c h l b s g v 3 1 2 d t o p v i e w
any changing of specification will not be informed individual BAV70W dual chips common cathode surface mount switching diode http://www.secosgmbh.com elektronische bauelemente figure 1. recovery time equivalent test circuit fi g ure 2. ?
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any changing of specification will not be informed individual BAV70W dual chips common cathode surface mount switching diode http://www.secosgmbh.com elektronische bauelemente t a = - 4 0 5 c o t a = 2 5 5 c o t a = 1 5 0 5 c o t a = 1 2 5 5 c o t a = 8 5 5 c o t a = 5 5 5 c o t a = 2 5 5 c o t a = 8 5 5 c o 1 0 0 0 . 2 0 . 4 v f , f o r w a r d v o l t a g e ( v o l t s ) 0 . 6 0 . 8 1 . 0 1 . 2 1 0 1 . 0 0 . 1 1 0 0 v r , r e v e r s e v o l t a g e ( v o l t s ) 1 . 0 0 . 1 0 . 0 1 0 . 0 0 1 1 0 2 0 3 0 4 0 5 0 1 . 0 0 v r , r e v e r s e v o l t a g e ( v o l t s ) 0 . 9 0 . 8 0 . 7 0 . 6 c d , d i o d e c a p a c i t a n c e ( p f ) 2 4 6 8 i f , f o r w a r d c u r r e n t ( m a ) f i g u r e 3 . f o r w a r d v o l t a g e f i g u r e 4 . l e a k a g e c u r r e n t f i g u r e 5 . c a p a c i t a n c e i r , reverse current ( a) 01 -jun-2004 rev. b page 3 of 3
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